Photoresist Processing Trouble-Shooting Etchants and Solvents
Photoresists Ancillaries Storage/Handling/Ageing Substrate Pre-Treatment and Coating Baking Steps Exposure Development Coating and Lift-off Etching and Stripping
Mechanism Development Rate and Dark Erosion Impact of the Softbake Impact of the Exposure Dose
The so-called Meyerhofer plot opposites the alkaline solubility of unexposed and completely exposed photo resists as a function of the photo active compound concentration. Before exposure, the inhibitor DNQ-sulfonate decreases the development rate by 1-2 orders of magnitude, which is similar to the development rate increase caused by the product of the photo reaction, the indene carboxylic acid.

The dependency of the exposure dose from the development rate of a thin (illumination penetration depth > resist film thickness), and a thick (penetration depth < film thickness) photo resist is different: From a certain exposure dose on, the photo active compound is sufficiently converted into the indene carboxylic acid to allow a constant high development rate in thin films. The impact of bleaching becomes clearly visible for thick resist films: Below a certain exposure dose, the resist cannot be cleared.
Weiterführendes Dokument (pdf) Literature: Exposure and Development  The Photoreaction
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