Photoresist Processing Trouble-Shooting Etchants and Solvents
Photoresists Ancillaries Storage/Handling/Ageing Substrate Pre-Treatment and Coating Baking Steps Exposure Development Coating and Lift-off Etching and Stripping
Mechanism Development Rate and Dark Erosion Impact of the Softbake Impact of the Exposure Dose
A softbake too long/too hot decomposes a certain fraction of the photo active compound, thus reducing the possible development rate. Hereby, the total dark erosion after development may increase despite a lower dark erosion rate. A good compromise between sufficient solvent evaporation and minimized DNQ-loss is a softbake at 100°C (hotplate) for 1 minute/μm resist film thickness.
Weiterführendes Dokument (pdf) Literature: Exposure and Development Weiterführendes Dokument (pdf) Introducing new Resists/Processes
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